Engineered arrays of NV color centers in diamond based on implantation of CN- molecules through nanoapertures

We report a versatile method to engineer arrays of nitrogen-vacancy (NV) color centers in dia- mond at the nanoscale. The defects were produced in parallel by ion implantation through 80 nm diameter apertures patterned using electron beam lithography in a PMMA layer deposited on a diamond surface. T...

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Bibliographic Details
Published inarXiv.org
Main Authors Spinicelli, P, Dréau, A, Rondin, L, Silva, F, Achard, J, Xavier, S, Bansropun, S, Debuisschert, T, Pezzagna, S, Meijer, J, Jacques, V, J -F Roch
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 09.08.2010
Subjects
Apertures
Arrays
Color centers
Diamonds
Electron beam lithography
Ion implantation
Optical activity
Photonics
Physics - Materials Science
Physics - Quantum Physics
Polymethyl methacrylate
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Summary:We report a versatile method to engineer arrays of nitrogen-vacancy (NV) color centers in dia- mond at the nanoscale. The defects were produced in parallel by ion implantation through 80 nm diameter apertures patterned using electron beam lithography in a PMMA layer deposited on a diamond surface. The implantation was performed with CN- molecules which increased the NV defect formation yield. This method could enable the realization of a solid-state coupled-spin array and could be used for positioning an optically active NV center on a photonic microstructure.
ISSN:2331-8422
DOI:10.48550/arxiv.1008.1483