Epitaxial growth and anisotropy of La(O,F)FeAs thin films deposited by Pulsed Laser Deposition

LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and post annealing of the films yield nearly phase pure films with...

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Bibliographic Details
Published inarXiv.org
Main Authors Backen, E, Haindl, S, Niemeier, T, Freudenberg, T, Werner, J, Behr, G, Schultz, L, Holzapfel, B
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 14.08.2008
Subjects
Anisotropy
Epitaxial growth
Fluorine
Physics - Superconductivity
Pulsed laser deposition
Pulsed lasers
Substrates
Superconductivity
Thin films
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Summary:LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and post annealing of the films yield nearly phase pure films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and onset of superconductivity at 11 K. Hc2(T) was determined by resistive measurements and yield Hc2 values of 3 T at 3.6 K for B||c and 6 T at 6.4 K for B||ab.
ISSN:2331-8422
DOI:10.48550/arxiv.0808.1864