A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for sol...

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Published inarXiv.org
Main Authors Sailer, J, Lang, V, Abstreiter, G, Tsuchiya, G, Itoh, K M, Ager, J W, Haller, E E, Kupidura, D, Harbusch, D, Ludwig, S, Bougeard, D
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 16.01.2009
Subjects
Carrier density
Data processing
Electron spin
Heterostructures
Molecular beam epitaxy
Nuclear spin
Palladium
Physics - Materials Science
Physics - Mesoscale and Nanoscale Physics
Quantum dots
Quantum phenomena
Quantum theory
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Summary:We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/Vs at a sheet carrier density of 4.6E11 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.
ISSN:2331-8422
DOI:10.48550/arxiv.0901.2433