Fully electrically read-write device out of a ferromagnetic semiconductor

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunnelin...

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Bibliographic Details
Published inarXiv.org
Main Authors Mark, S, Dürrenfeld, P, Pappert, K, Ebel, L, Brunner, K, Gould, C, Molenkamp, L W
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 20.12.2010
Subjects
Data processing
Ferromagnetism
Physics - Mesoscale and Nanoscale Physics
Programmable logic devices
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Summary:We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.
ISSN:2331-8422
DOI:10.48550/arxiv.1012.4252