Tunnelling anisotropic magnetoresistance of Fe/GaAs/Ag(001) junctions from first principles: Effect of hybridized interface resonances

Results of first-principles calculations of the Fe/GaAs/Ag(001) epitaxial tunnel junctions reveal that hybridization of interface resonances formed at both interfaces can enhance the tunnelling anisotropic magnetoresistance (TAMR) of the systems. This mechanism is manifested by a non-monotonic depen...

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Bibliographic Details
Published inarXiv.org
Main Authors Sykora, Rudolf, Turek, Ilja
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 04.06.2012
Subjects
Anisotropy
Brillouin zones
Dependence
First principles
Magnetoresistance
Magnetoresistivity
Physics - Materials Science
Silver
Thickness
Tunnel junctions
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Summary:Results of first-principles calculations of the Fe/GaAs/Ag(001) epitaxial tunnel junctions reveal that hybridization of interface resonances formed at both interfaces can enhance the tunnelling anisotropic magnetoresistance (TAMR) of the systems. This mechanism is manifested by a non-monotonic dependence of the TAMR effect on the thickness of the tunnel barrier, with a maximum for intermediate thicknesses. A detailed scan of k-resolved transmissions over the two-dimensional Brillouin zone proves an interplay between a few hybridization-induced hot spots and a contribution to the tunnelling from the vicinity of the Gamma-bar point. This interpretation is supported by calculated properties of a simple tight-binding model of the junction which reproduce qualitatively most of the features of the first-principles theory.
ISSN:2331-8422
DOI:10.48550/arxiv.1206.0615