Spin dependent transport in an electron gas with magnetic disorder

We consider a two dimensional semiconductor with carriers subject to spin-orbit interactions and scattered by randomly distributed magnetic impurities. We solve the time-dependent Schroedinger equation to investigate the relationship between the geometrical properties of the wavefunction and the sys...

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Bibliographic Details
Published inarXiv.org
Main Authors T L van den Berg, Verga, A
Format Paper Journal Article
LanguageEnglish
Published Ithaca Cornell University Library, arXiv.org 12.07.2012
Subjects
Diffusion effects
Electron gas
Electron spin
Impurities
Physics - Mesoscale and Nanoscale Physics
Schrodinger equation
Spin-orbit interactions
Time dependence
Transport properties
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Summary:We consider a two dimensional semiconductor with carriers subject to spin-orbit interactions and scattered by randomly distributed magnetic impurities. We solve the time-dependent Schroedinger equation to investigate the relationship between the geometrical properties of the wavefunction and the system's spin dependent transport properties. Even in the absence of localized states, interference effects modify the carrier diffusion, as revealed by the appearance of power laws dependent on the impurity concentration. For stronger disorder, we find a localization transition characterized by a fractal wavefunction and enhanced spin transport.
Bibliography:SourceType-Working Papers-1
ObjectType-Working Paper/Pre-Print-1
content type line 50
ISSN:2331-8422
DOI:10.48550/arxiv.1203.2568