Intrinsic Energy Dissipation in CVD-Grown Graphene Nanoresonators

• Published in: arXiv.org
• Main Authors: Qi, Zenan, Park, Harold S
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 06.04.2012
• Subjects: Energy dissipation; Grain boundaries; Graphene; Molecular dynamics; Monolayers; Physics - Computational Physics; Physics - Mesoscale and Nanoscale Physics; Tensile strain
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.1204.1506

We utilize classical molecular dynamics to study the the quality (Q)-factors of monolayer CVD-grown graphene nanoresonators. In particular, we focus on the effects of intrinsic grain boundaries of different orientations, which result from the CVD growth process, on the Q-factors. For a range of misorientations orientation angles that are consistent with those seen experimentally in CVD-grown graphene, i.e. 0\(^{\circ}\) to \(\sim20^{\circ}\), we find that the Q-factors for graphene with intrinsic grain boundaries are 1-2 orders of magnitude smaller than that of pristine monolayer graphene. We find that the Q-factor degradation is strongly influenced by both the symmetry and structure of the 5-7 defect pairs that occur at the grain boundary. Because of this, we also demonstrate that find the Q-factors CVD-grown graphene can be significantly elevated, and approach that of pristine graphene, through application of modest (1%) tensile strain.