Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling

• Published in: arXiv.org
• Main Authors: Smrcka, L, Goncharuk, N A, Svoboda, P, Vasek, P, Yu Krupko, Wegscheider, W
• Format: Paper Journal Article
• Language: English
• Published: Ithaca Cornell University Library, arXiv.org 25.07.2007
• Subjects: Aluminum gallium arsenides; Electron tunneling; Gallium arsenide; Illumination; Magnetoresistance; Magnetoresistivity; Physics - Mesoscale and Nanoscale Physics; Physics - Other Condensed Matter; Quantum wells; Silicon; Superlattices
• ISSN: 2331-8422
• DOI: 10.48550/arxiv.0707.3692

We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly coupled superlattice with narrow wells leads to reduction of its dimensionality from the 3D to 2D. The illumination-induced transition is revealed by remarkable change of magnetoresistance curves as compared to those measured before illumination. The experimental data along with tight-binding model calculations indicate that the illumination not only enhances the electron concentration but also suppresses the electron tunneling through the barriers.