Bias current dependence of the spin lifetime in insulating Al\(_{0.3}\)Ga\(_{0.7}\)As
The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating Al\(_{0.3}\)Ga\(_{0.7}\)As:Si using a three-terminal Hanle effect geometry. The amplitudes of the Hanle signals are much larger for forward bias than for reverse bias, although the spin lifeti...
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Published in | arXiv.org |
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Main Authors | , , , , , , , , |
Format | Paper Journal Article |
Language | English |
Published |
Ithaca
Cornell University Library, arXiv.org
23.02.2014
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Subjects | |
Online Access | Get full text |
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Summary: | The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating Al\(_{0.3}\)Ga\(_{0.7}\)As:Si using a three-terminal Hanle effect geometry. The amplitudes of the Hanle signals are much larger for forward bias than for reverse bias, although the spin lifetimes found are statistically equivalent. The spin resistance-area product shows a strong increase with bias current for reverse bias and small forward bias until 150 \(\mu\)A, beyond which a weak dependence is observed. The spin lifetimes diminish substantially with increasing bias current. The dependence of the spin accumulation and lifetime diminish only moderately with temperature from 5 K to 30 K. |
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ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.1402.5567 |