Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography

• Published in: Nano letters Vol. 17; no. 12; pp. 7533 - 7538
• Main Authors: Tsutsui, Kazuo, Matsushita, Tomohiro, Natori, Kotaro, Muro, Takayuki, Morikawa, Yoshitada, Hoshii, Takuya, Kakushima, Kuniyuki, Wakabayashi, Hitoshi, Hayashi, Kouichi, Matsui, Fumihiko, Kinoshita, Toyohiko
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 13.12.2017
• Subjects: cluster; impurity; Photoelectron holography; silicon; arsenic; dopant
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.7b03467

The atomic scale characterization of dopant atoms in semiconductor devices to establish correlations with the electrical activation of these atoms is essential to the advancement of contemporary semiconductor process technology. Spectro-photoelectron holography combined with first-principles simulations can determine the local three-dimensional atomic structures of dopant elements, which in turn affect their electronic states. In the work reported herein, this technique was used to examine arsenic (As) atoms doped into a silicon (Si) crystal. As 3d core level photoelectron spectroscopy demonstrated the presence of three types of As atoms at a total concentration of approximately 1020 cm–3, denoted as BEH, BEM, and BEL. On the basis of Hall effect measurements, the BEH atoms corresponded to electrically active As occupying substitutional sites and exhibiting larger thermal fluctuations than the Si atoms, while the BEM atoms corresponded to electrically inactive As embedded in the As n V (n = 2–4) type clusters. Finally, the BEL atoms were assigned to electrically inactive As in locally disordered structures.