Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers

Experimental results of the combination of transverse mode selection and active mode-locking with anti-reflection-coated broad area lasers (BALs) are presented. The BALs are subject to feedback from a free-space external Fourier-optical 4f-setup with a reflective spatial frequency filter in the Four...

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Bibliographic Details
Published inAdvances in OptoElectronics (Hindawi) Vol. 2014; no. 2014; pp. 1 - 5
Main Authors Doering, Christoph, Fouckhardt, Henning
Format Journal Article
LanguageEnglish
Published Cairo, Egypt Hindawi Puplishing Corporation 01.01.2014
Hindawi Publishing Corporation
Hindawi Limited
Subjects
Frequency filters
High frequencies
Lasers
Optoelectronics
Pulse duration
Pumps
R&D
Radio frequency
Research & development
Semiconductor lasers
Thresholds
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Summary:Experimental results of the combination of transverse mode selection and active mode-locking with anti-reflection-coated broad area lasers (BALs) are presented. The BALs are subject to feedback from a free-space external Fourier-optical 4f-setup with a reflective spatial frequency filter in the Fourier-plane for transverse mode selection. Driving the BALs with a high frequency modulated pump current above threshold active longitudinal mode-locking is achieved. Pulse durations as low as 88 ps are obtained, while the Gaussian-like fundamental or a higher order transverse mode up to mode number 5 is selected on purpose. Pulse duration and shape are nearly independent of the selected transverse mode.
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ISSN:1687-563X
1687-5648
DOI:10.1155/2014/293590