Large Physisorption Strain in Chemical Vapor Deposition of Graphene on Copper Substrates

• Published in: Nano letters Vol. 12; no. 5; pp. 2408 - 2413
• Main Authors: He, Rui, Zhao, Liuyan, Petrone, Nicholas, Kim, Keun Soo, Roth, Michael, Hone, James, Kim, Philip, Pasupathy, Abhay, Pinczuk, Aron
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 09.05.2012
• Subjects: CHEMICAL VAPOR DEPOSITION; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Compressive properties; COMPUTER SIMULATION; Copper; Cross-disciplinary physics: materials science; rheology; DEPOSITION; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Graphene; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MICA; MICROSTRUCTURES; Molecular dynamics; Nanostructure; Nonuniform; Physics; PROPERTIES; Simulation; Specific materials; STRAIN; VAPOR DEPOSITION; CVD; strain; copper; Graphene; Monocrystals; Digital simulation; Molecular dynamics method; Theoretical study; Copper; Raman spectroscopy; Physisorption
• ISSN: 1530-6984; 1530-6992; 1530-6992
• DOI: 10.1021/nl300397v

Graphene single layers grown by chemical vapor deposition on single crystal Cu substrates are subject to nonuniform physisorption strains that depend on the orientation of the Cu surface. The strains are revealed in Raman spectra and quantitatively interpreted by molecular dynamics (MD) simulations. An average compressive strain on the order of 0.5% is determined in graphene on Cu(111). In graphene on Cu (100), MD simulations interpret the observed highly nonuniform strains.