Boron-Doped Spherical Hollow-Porous Silicon Local Lattice Expansion toward a High-Performance Lithium-Ion-Battery Anode
Silicon (Si) attracts extensive attention as the advanced anode material for lithium (Li)-ion batteries (LIBs) because of its ultrahigh Li storage capacity and suitable voltage plateau. Hollow porous structure and dopant-induced lattice expansion can enhance the cycling stability and transporting ki...
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Published in | Inorganic chemistry Vol. 58; no. 7; pp. 4592 - 4599 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
American Chemical Society
01.04.2019
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Online Access | Get full text |
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Summary: | Silicon (Si) attracts extensive attention as the advanced anode material for lithium (Li)-ion batteries (LIBs) because of its ultrahigh Li storage capacity and suitable voltage plateau. Hollow porous structure and dopant-induced lattice expansion can enhance the cycling stability and transporting kinetics of Li ions. However, it is still difficult to synthesize the Si anode possessing these structures simultaneously by a facile method. Herein, the lightly boron (B)-doped spherical hollow-porous Si (B-HPSi) anode material for LIBs is synthesized by a facile magnesiothermic reduction from B-doped silica. B-HPSi exhibits local lattice expansion located on boundaries of refined subgrains. B atoms in Si contribute to the increase of the conductivity and the expansion of lattices. On the basis of the first-principles calculations, the B dopants induce the conductivity increase and local lattice expansion. As a result, B-HPSi electrodes exhibit a high specific capacity of ∼1500 mAh g–1 at 0.84 A g–1 and maintains 93% after 150 cycles. The reversible capacities of ∼1250, ∼1000, and ∼800 mAh g–1 can be delivered at 2.1, 4.2, and 8.4 A g–1, respectively. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0020-1669 1520-510X |
DOI: | 10.1021/acs.inorgchem.9b00158 |