Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon

Metal-assisted chemical etching (MACE) is a versatile anisotropic etch for silicon although its mechanism is not well understood. Here we propose that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxid...

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Bibliographic Details
Published inACS applied materials & interfaces Vol. 8; no. 14; pp. 8875 - 8879
Main Authors Lai, Ruby A, Hymel, Thomas M, Narasimhan, Vijay K, Cui, Yi
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 13.04.2016
Subjects
dopant etch stop
metal-assisted chemical etching
kinetic rate exponents
nanoporous catalyst
reaction mechanism
anisotropic etching
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Summary:Metal-assisted chemical etching (MACE) is a versatile anisotropic etch for silicon although its mechanism is not well understood. Here we propose that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxide. The proposed mechanism can be used to explain the dependence of the etching kinetics on the doping level, doping type, crystallographic surface direction, and etchant solution composition. We used the doping dependence of the reaction to fabricate a novel etch stop for the reaction.
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EE0004946; AC02-76SF00515
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.6b01020