Self-Assembly of Organic Monolayers onto Hydrogen-Terminated Silicon: 1-Alkynes Are Better Than 1-Alkenes
Recently, a new method for the preparation of high-quality organic monolayers with 1-alkynes at room temperature in the dark (i.e., without any external activation) was reported. To pinpoint the precise origin of this self-assembly process and to compare the reactivity of 1-alkenes and 1-alkynes tow...
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Published in | Langmuir Vol. 26; no. 13; pp. 10924 - 10929 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Washington, DC
American Chemical Society
06.07.2010
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Subjects | |
Online Access | Get full text |
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Summary: | Recently, a new method for the preparation of high-quality organic monolayers with 1-alkynes at room temperature in the dark (i.e., without any external activation) was reported. To pinpoint the precise origin of this self-assembly process and to compare the reactivity of 1-alkenes and 1-alkynes toward hydrogen-terminated Si(111) [H−Si(111)], we followed the gradual formation of both monolayers at room temperature by static water contact angle measurements. Subsequently, attenuated total reflection infrared spectroscopy (ATR-IR) and X-ray photoelectron spectroscopy (XPS) were used to obtain detailed information about the structure and quality of the resulting monolayers. Our data clearly demonstrate that 1-alkynes are considerably more reactive toward H−Si(111) than 1-alkenes. 1-Alkynes are able to self-assemble into densely packed hydrophobic monolayers without any external activation (i.e., at room temperature under ambient light and even in the dark) whereas for 1-alkenes under the same conditions hardly any reactivity toward H−Si(111) was observed. The self-assembly of 1-alkynes on H−Si(111) at room temperature is explained by three factors: the higher nucleophilicity of 1-alkynes, which results in a facile attack at the electron−hole pairs at the H−Si surface and easy Si−C bond formation, the stabilization of the β radical by delocalization over the double bond, and the lower-energy barrier encountered for H abstractions. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0743-7463 1520-5827 |
DOI: | 10.1021/la100858q |