Beta Irradiation Effects on Electrical Characteristics of Graphene-Doped PVA/n-type Si Nanostructures

• Published in: ACS omega Vol. 9; no. 22; pp. 23193 - 23201
• Main Authors: Abay, Özlem, Ulusoy, Murat, Uyar, Esra, Gökmen, Uğur, Bilge Ocak, Sema
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 04.06.2024
• ISSN: 2470-1343; 2470-1343
• DOI: 10.1021/acsomega.3c08449

This study investigates the beta irradiation’s impact on the electrical features of interfacial nanostructures composed of poly­(vinyl alcohol) (PVA) doped with graphene. The integration of graphene, a 2D carbon allotrope renowned for its exceptional electrical conductivity, into PVA nanostructures holds significant promise for advanced electronic applications. Beta irradiation, as a controlled method of introducing radiation, offers a unique avenue to modulate the properties of these nanostructures. Therefore, this study examines the Au/3% graphene­(Gr)-doped PVA/n-type Si structure with and without beta (β) radiation. The effect of beta radiation on the electrical properties of the Au/3% graphene­(Gr)-doped PVA/n-type Si structure has been researched by utilizing the current–voltage (I–V) data. The studied structures were exposed to a 90Sr β-ray source at room temperature to show the effect of beta radiation. The series resistance (R s), shunt resistance (R sh), ideality factor (n), barrier height (BH) (ΦB0), and saturation current (I o) were computed using the I–V data after 90Sr β-ray irradiation (0, 6, and 18 kGy) and before using the thermionic emission, Norde, and Cheung methods. The BH, ideality factor, and series resistance were calculated using the I–V data as follows: 0.888 eV, 3.21, and 5.25 kΩ for 0 kGy; 0.782 eV, 5.30, and 3.47 for 6 kGy; 0.782 eV, 5.46, and 2.63 kΩ for 18kGy. The BH, ideality factor, and series resistance were also calculated using the Cheng Methods, and the following results were found respectively: 7.22, 0.74, and 3.97 kΩ (Cheng I), and 3.22 kΩ (Cheng II) for 0 kGy; 5.14, 0.813, and 2.72 kΩ (Cheng I), and 2.14 kΩ (Cheng II) for 6 kGy; 6.78, 0.721, and 1.96 kΩ (Cheng I), 1.64 kΩ (Cheng II) for 18 kGy. The BH and series resistance were defined as 0.905 and 16.12 kΩ for 0 kGy, 0.859 and 5.31 kΩ for 6 kGy, and 0.792 and 2.49 kΩ for 18 kGy, respectively. Interface states density (N ss) as a function of E c–E ss was also attained by taking into account the voltage dependence of n, ΦB, and R s. Experimental results showed that the values of n and N ss increased with an increase in the β-ray radiation dose. On the other hand, the saturation current (I o), ΦB0, and R s values decreased with the increase in the β-ray radiation dose. The obtained results indicate a nuanced interplay between β irradiation dose and the nanostructure’s overall electrical properties. Insights gained from this study contribute to the understanding of radiation-induced effects on graphene-doped polymer nanostructures, providing valuable information for optimizing their performance in electronic applications.