Semiconductor Epitaxy in Superconducting Templates

Integration of high-quality semiconductor–superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integ...

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Published inNano letters Vol. 21; no. 23; pp. 9922 - 9929
Main Authors Ritter, Markus F, Schmid, Heinz, Sousa, Marilyne, Staudinger, Philipp, Haxell, Daniel Z, Mueed, M. A, Madon, Benjamin, Pushp, Aakash, Riel, Heike, Nichele, Fabrizio
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 08.12.2021
Subjects
Letter
titanium nitride (TiN)
Semiconductor−superconductor hybrids
indium arsenide (InAs)
template-assisted selective epitaxy
semiconductor epitaxy
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Summary:Integration of high-quality semiconductor–superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor–superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.
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ISSN:1530-6984
1530-6992
1530-6992
DOI:10.1021/acs.nanolett.1c03133