Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets

• Published in: ACS nano Vol. 8; no. 2; pp. 1457 - 1462
• Main Authors: Li, Lu Hua, Cervenka, Jiri, Watanabe, Kenji, Taniguchi, Takashi, Chen, Ying
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 25.02.2014
• Subjects: Boron nitride; Etching; Graphene; Heating; Monolayers; Nanostructure; Oxidation; Oxidation resistance; Two dimensional; oxidation; Raman spectroscopy; nanosheet; atomically thin boron nitride; stability
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/nn500059s

Investigation of oxidation resistance of two-dimensional (2D) materials is critical for many of their applications because 2D materials could have higher oxidation kinetics than their bulk counterparts due to predominant surface atoms and structural distortions. In this study, the oxidation behavior of high-quality boron nitride (BN) nanosheets of 1–4 layers thick has been examined by heating in air. Atomic force microscopy and Raman spectroscopy analyses reveal that monolayer BN nanosheets can sustain up to 850 °C, and the starting temperature of oxygen doping/oxidation of BN nanosheets only slightly increases with the increase of nanosheet layer and depends on heating conditions. Elongated etch lines are found on the oxidized monolayer BN nanosheets, suggesting that the BN nanosheets are first cut along the chemisorbed oxygen chains and then the oxidative etching grows perpendicularly to these cut lines. The stronger oxidation resistance of BN nanosheets makes them more preferable for high-temperature applications than graphene.