Influence of a Water Rinse on the Structure and Properties of Poly(3,4-ethylene dioxythiophene):Poly(styrene sulfonate) Films

• Published in: Langmuir Vol. 21; no. 24; pp. 11480 - 11483
• Main Authors: DeLongchamp, Dean M, Vogt, Bryan D, Brooks, Charles M, Kano, Kenji, Obrzut, Jan, Richter, Curt A, Kirillov, Oleg A, Lin, Eric K
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 22.11.2005
• Subjects: Chemistry; Exact sciences and technology; General and physical chemistry; Water; Lead oxide; Hydrocarbon; Electrical properties; Film; Ethylene; Conductivity; Complexes; Indium oxide; Sulfonic acid; Dielectric relaxation; Sulfonate; Electrodes; Thickness; Tin oxide; Styrene; Benzenic compound; Frequency; Structure
• ISSN: 0743-7463; 1520-5827
• DOI: 10.1021/la051403l

Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) films exhibit a complex structure of interconnected conductive PEDOT domains in an insulating PSS matrix that controls their electrical properties. This structure is modified by a water rinse, which removes PSS with negligible PEDOT loss. Upon PSS removal, film thickness is reduced by 35%, conductivity is increased by 50%, and a prominent dielectric relaxation is eliminated. These results suggest that the removed PSS is not associated with PEDOT and that the conductive domain network is not substantially altered by the removal of a significant fraction of insulator. The removal of PSS may benefit organic light emitting diode fabrication by reducing acid attack on indium tin oxide electrodes and lead to more robust performance in switching circuits by extending the working frequency range.