Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires
We report a novel phase separation phenomenon observed in the growth of ternary In x Ga1‑x As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core–shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexi...
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Published in | Nano letters Vol. 13; no. 2; pp. 643 - 650 |
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Main Authors | , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Washington, DC
American Chemical Society
13.02.2013
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Subjects | |
Online Access | Get full text |
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Summary: | We report a novel phase separation phenomenon observed in the growth of ternary In x Ga1‑x As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core–shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexity within the ternary nanowires. It has been found that for In x Ga1‑x As nanowires high precursor flow rates generate ternary In x Ga1‑x As cores with In-rich shells, while low precursor flow rates produce binary GaAs cores with ternary In x Ga1‑x As shells. First-principle calculations combined with thermodynamic considerations suggest that this phenomenon is due to competitive alloying of different group-III elements with Au catalysts, and variations in elemental concentrations of group-III materials in the catalyst under different precursor flow rates. This study shows that precursor flow rates are critical factors for manipulating Au catalysts to produce nanowires of desired composition. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1530-6984 1530-6992 |
DOI: | 10.1021/nl304237b |