Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires

We report a novel phase separation phenomenon observed in the growth of ternary In x Ga1‑x As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core–shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexi...

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Published inNano letters Vol. 13; no. 2; pp. 643 - 650
Main Authors Guo, Ya-Nan, Xu, Hong-Yi, Auchterlonie, Graeme J, Burgess, Tim, Joyce, Hannah J, Gao, Qiang, Tan, Hark Hoe, Jagadish, Chennupati, Shu, Hai-Bo, Chen, Xiao-Shuang, Lu, Wei, Kim, Yong, Zou, Jin
Format Journal Article
LanguageEnglish
Published Washington, DC American Chemical Society 13.02.2013
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Summary:We report a novel phase separation phenomenon observed in the growth of ternary In x Ga1‑x As nanowires by metalorganic chemical vapor deposition. A spontaneous formation of core–shell nanowires is investigated by cross-sectional transmission electron microscopy, revealing the compositional complexity within the ternary nanowires. It has been found that for In x Ga1‑x As nanowires high precursor flow rates generate ternary In x Ga1‑x As cores with In-rich shells, while low precursor flow rates produce binary GaAs cores with ternary In x Ga1‑x As shells. First-principle calculations combined with thermodynamic considerations suggest that this phenomenon is due to competitive alloying of different group-III elements with Au catalysts, and variations in elemental concentrations of group-III materials in the catalyst under different precursor flow rates. This study shows that precursor flow rates are critical factors for manipulating Au catalysts to produce nanowires of desired composition.
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl304237b