High-Field Electrical and Thermal Transport in Suspended Graphene
We study the intrinsic transport properties of suspended graphene devices at high fields (≥1 V/μm) and high temperatures (≥1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6 × 107 cm/s (1.7 × 107 cm/s) and peak (average) thermal conductivity of 530 W m–1 K–1 (310 W m–1 K–1...
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Published in | Nano letters Vol. 13; no. 10; pp. 4581 - 4586 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Washington, DC
American Chemical Society
09.10.2013
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Subjects | |
Online Access | Get full text |
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Summary: | We study the intrinsic transport properties of suspended graphene devices at high fields (≥1 V/μm) and high temperatures (≥1000 K). Across 15 samples, we find peak (average) saturation velocity of 3.6 × 107 cm/s (1.7 × 107 cm/s) and peak (average) thermal conductivity of 530 W m–1 K–1 (310 W m–1 K–1) at 1000 K. The saturation velocity is 2–4 times and the thermal conductivity 10–17 times greater than in silicon at such elevated temperatures. However, the thermal conductivity shows a steeper decrease at high temperature than in graphite, consistent with stronger effects of second-order three-phonon scattering. Our analysis of sample-to-sample variation suggests the behavior of “cleaner” devices most closely approaches the intrinsic high-field properties of graphene. This study reveals key features of charge and heat flow in graphene up to device breakdown at ∼2230 K in vacuum, highlighting remaining unknowns under extreme operating conditions. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1530-6984 1530-6992 |
DOI: | 10.1021/nl400197w |