Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories

Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, the switching behavior has been widely reported, and understanding the switching mechanism can improve the stability and scalability of devices. We designed an innovativ...

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Bibliographic Details
Published inNano letters Vol. 13; no. 8; pp. 3671 - 3677
Main Authors Chen, Jui-Yuan, Hsin, Cheng-Lun, Huang, Chun-Wei, Chiu, Chung-Hua, Huang, Yu-Ting, Lin, Su-Jien, Wu, Wen-Wei, Chen, Lih-Juann
Format Journal Article
LanguageEnglish
Published Washington, DC American Chemical Society 14.08.2013
Subjects
Atomic structure
Condensed matter: structure, mechanical and thermal properties
Conduction
Diffusion in nanoscale solids
Diffusion in solids
Electron energy loss spectroscopy
Exact sciences and technology
Filaments
Nanostructure
Physics
Switching
Transport properties of condensed matter (nonelectronic)
Zinc
Zinc oxide
nanofilament
RRAM
resistive switching
unipolar
In situ TEM
redox
Random-access storage
Real time
Switching
Zinc
Thin films
Transmission electron microscopy
EEL spectroscopy
Calcium nitride
Non volatile memory
Zinc oxide
Diffusion
Atomic structure
IV characteristic
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Summary:Resistive random access memory (ReRAM) has been considered the most promising next-generation nonvolatile memory. In recent years, the switching behavior has been widely reported, and understanding the switching mechanism can improve the stability and scalability of devices. We designed an innovative sample structure for in situ transmission electron microscopy (TEM) to observe the formation of conductive filaments in the Pt/ZnO/Pt structure in real time. The corresponding current–voltage measurements help us to understand the switching mechanism of ZnO film. In addition, high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) have been used to identify the atomic structure and components of the filament/disrupted region, determining that the conducting paths are caused by the conglomeration of zinc atoms. The behavior of resistive switching is due to the migration of oxygen ions, leading to transformation between Zn-dominated ZnO1–x and ZnO.
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl4015638