Robust Pattern Transfer of Nanoimprinted Features for Sub-5-nm Fabrication
We explore the limits of a simple and facile process for transferring low aspect ratio, high-resolution features defined by nanoimprint lithography. The process involves postimprint deposition of an angle-evaporated hard mask. This widens the process window for residual resist removal and facilitate...
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Published in | Nano letters Vol. 9; no. 10; pp. 3629 - 3634 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Washington, DC
American Chemical Society
01.10.2009
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Subjects | |
Online Access | Get full text |
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Summary: | We explore the limits of a simple and facile process for transferring low aspect ratio, high-resolution features defined by nanoimprint lithography. The process involves postimprint deposition of an angle-evaporated hard mask. This widens the process window for residual resist removal and facilitates easy liftoff. An added benefit is a concomitant reduction of feature size. A postliftoff annealing step produces high pattern uniformity and additional feature size reduction. The process is extremely robust, and it enables relatively straightforward fabrication of sub-5-nm spherical structures. It is extendible to rectilinear patterns as well. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1530-6984 1530-6992 |
DOI: | 10.1021/nl9018512 |