Robust Pattern Transfer of Nanoimprinted Features for Sub-5-nm Fabrication

We explore the limits of a simple and facile process for transferring low aspect ratio, high-resolution features defined by nanoimprint lithography. The process involves postimprint deposition of an angle-evaporated hard mask. This widens the process window for residual resist removal and facilitate...

Full description

Saved in:
Bibliographic Details
Published inNano letters Vol. 9; no. 10; pp. 3629 - 3634
Main Authors Schvartzman, Mark, Wind, Shalom J
Format Journal Article
LanguageEnglish
Published Washington, DC American Chemical Society 01.10.2009
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of nanofabrication
Physics
Annealing
Nanoimprint lithography
Aspect ratio
Nanomaterial synthesis
Resists
Nanoimprint
Online AccessGet full text

Cover

More Information
Summary:We explore the limits of a simple and facile process for transferring low aspect ratio, high-resolution features defined by nanoimprint lithography. The process involves postimprint deposition of an angle-evaporated hard mask. This widens the process window for residual resist removal and facilitates easy liftoff. An added benefit is a concomitant reduction of feature size. A postliftoff annealing step produces high pattern uniformity and additional feature size reduction. The process is extremely robust, and it enables relatively straightforward fabrication of sub-5-nm spherical structures. It is extendible to rectilinear patterns as well.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1530-6984
1530-6992
DOI:10.1021/nl9018512