Improving the Robustness of Organic Semiconductors through Hydrogen Bonding

• Published in: ACS applied materials & interfaces Vol. 13; no. 7; pp. 8620 - 8630
• Main Authors: Gómez, Paula, Georgakopoulos, Stamatis, Más-Montoya, Miriam, Cerdá, Jesús, Pérez, José, Ortí, Enrique, Aragó, Juan, Curiel, David
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 24.02.2021
• Subjects: Organic Electronic Devices; self-assembly; organic semiconductors; organic field-effect transistors; hole-transporting materials; organic electronics; charge transport; hydrogen-bonded materials
• ISSN: 1944-8244; 1944-8252; 1944-8252
• DOI: 10.1021/acsami.0c18928

Molecular organization plays an essential role in organic semiconductors since it determines the extent of intermolecular interactions that govern the charge transport present in all electronic applications. The benefits of hydrogen bond-directed self-assembly on charge transport properties are demonstrated by comparing two analogous pyrrole-based, fused heptacyclic molecules. The rationally designed synthesis of these materials allows for inducing or preventing hydrogen bonding. Strategically located hydrogen bond donor and acceptor sites control the solid-state arrangement, favoring the supramolecular expansion of the π-conjugated surface and the subsequent π-stacking as proved by X-ray diffraction and computational calculations. The consistency observed for the performance of organic field-effect transistors and the morphology of the organic thin films corroborate that higher stability and thermal robustness are achieved in the hydrogen-bonded material.