Surface concentrations of indium, phosphorus and oxygen in indium phosphide single crystals after exposure to gamble solution

• Published in: Analytical chemistry (Washington) Vol. 64; no. 23; pp. 2929 - 2933
• Main Authors: Dittmar, Tami B, Fernando, Quintus, Leavitt, J. A, McIntyre, L. C
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 01.12.1992
• Subjects: Chemistry; Condensed matter: structure, mechanical and thermal properties; Crystals; Exact sciences and technology; Mechanical and acoustical properties; adhesion; Phosphates; Physics; Semiconductors; Solid surfaces and solid-solid interfaces; Solid-fluid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Chemical solution; Liquid solid interface; Chemical analysis; Semiconductor materials; Impurity density; Indium Phosphides; X ray; Surface analysis; Experimental study; Dissolution; Inorganic compound; Rutherford backscattering; Photoelectron spectrometry; Exposure time; Concentration distribution
• ISSN: 0003-2700; 1520-6882
• DOI: 10.1021/ac00047a009

Indium phosphide is an important III-V semiconductor for the fabrication of a variety of semiconductor devices. A study of the surface of indium phosphide single crystals exposed to synthetic lung fluid is presented.