Ideal Graphene/Silicon Schottky Junction Diodes

The proper understanding of semiconductor devices begins at the metal–semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal–silicon Schot...

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Bibliographic Details
Published inNano letters Vol. 14; no. 8; pp. 4660 - 4664
Main Authors Sinha, Dhiraj, Lee, Ji Ung
Format Journal Article
LanguageEnglish
Published Washington, DC American Chemical Society 13.08.2014
Subjects
Applied sciences
Cross-disciplinary physics: materials science; rheology
Electronics
Exact sciences and technology
Fullerenes and related materials; diamonds, graphite
Interfaces
Materials science
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
Landauer transport formalism
injection rate
Graphene
ideal diode
Interfaces
Transport properties
Semiconductor materials
Semiconductor devices
Doping
Schottky barrier diodes
Silicon
Junction diodes
IV characteristic
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Summary:The proper understanding of semiconductor devices begins at the metal–semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal–silicon Schottky junctions by using graphene, an atomically thin semimetal. We show that a fundamentally new transport model is needed to describe the graphene–silicon Schottky junction. While the current–voltage behavior follows the celebrated ideal diode behavior, the details of the diode characteristics is best characterized by the Landauer transport formalism, suggesting that the injection rate from graphene ultimately determines the transport properties of this new Schottky junction.
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl501735k