High-Temperature Raman Spectroscopy of Solid Oxide Fuel Cell Materials and Processes

Chemical and material processes occurring in high temperature environments are difficult to quantify due to a lack of experimental methods that can probe directly the species present. In this letter, Raman spectroscopy is shown to be capable of identifying in-situ and noninvasively changes in materi...

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Bibliographic Details
Published inThe journal of physical chemistry. B Vol. 110; no. 35; pp. 17305 - 17308
Main Authors Pomfret, Michael B, Owrutsky, Jeffrey C, Walker, Robert A
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 07.09.2006
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Summary:Chemical and material processes occurring in high temperature environments are difficult to quantify due to a lack of experimental methods that can probe directly the species present. In this letter, Raman spectroscopy is shown to be capable of identifying in-situ and noninvasively changes in material properties as well as the formation and disappearance of molecular species on surfaces at temperatures of 715 °C. The material, yttria-stabilized zirconia or YSZ, and the molecular species, Ni/NiO and nanocrystalline graphite, factor prominently in the chemistry of solid oxide fuel cells (SOFCs). Experiments demonstrate the ability of Raman spectroscopy to follow reversible oxidation/reduction kinetics of Ni/NiO as well as the rate of carbon disappearance when graphite, formed in-situ, is exposed to a weakly oxidizing atmosphere. In addition, the Raman active phonon mode of YSZ shows a temperature dependent shift that correlates closely with the expansion of the lattice parameter, thus providing a convenient internal diagnostic for identifying thermal gradients in high temperature systems. These findings provide direct insight into processes likely to occur in operational SOFCs and motivate the use of in-situ Raman spectroscopy to follow chemical processes in these high-temperature, electrochemically active environments.
Bibliography:istex:6D8482BD2DF8219A427356143CF1D0C067C615E6
ark:/67375/TPS-MC3J5QFR-3
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ObjectType-Correspondence-1
ISSN:1520-6106
1520-5207
DOI:10.1021/jp063952l