Visible−Near Infrared Absorbing Dithienylcyclopentadienone−Thiophene Copolymers for Organic Thin-Film Transistors

Structural design, synthesis, and characterization of a series of organic semiconductors consisting exclusively of dithienylcyclopentadienone subunits within a polythiophene backbone are described as the first example for organic electronic devices. The donor (thiophene)-alt-acceptor (cyclopentadien...

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Bibliographic Details
Published inJournal of the American Chemical Society Vol. 130; no. 49; pp. 16524 - 16526
Main Authors Yang, Changduk, Cho, Shinuk, Chiechi, Ryan C, Walker, Wesley, Coates, Nelson E, Moses, Daniel, Heeger, Alan J, Wudl, Fred
Format Journal Article
LanguageEnglish
Published WASHINGTON American Chemical Society 10.12.2008
Amer Chemical Soc
Subjects
Absorption
Chemistry
Chemistry, Multidisciplinary
Cyclopentanes - chemistry
Electrochemistry
Infrared Rays
Physical Sciences
Polymers - chemistry
Science & Technology
Spectrophotometry, Ultraviolet
Thiophenes - chemistry
Transistors, Electronic
CROSS-COUPLING REACTIONS
ELECTROCHEMICAL PROPERTIES
CONJUGATED POLYMERS
DONOR
CARRIER MOBILITY
POLYTHIOPHENES
SEMICONDUCTING POLYMERS
FIELD-EFFECT TRANSISTORS
INTRAMOLECULAR CHARGE-TRANSFER
OLIGOMERS
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Summary:Structural design, synthesis, and characterization of a series of organic semiconductors consisting exclusively of dithienylcyclopentadienone subunits within a polythiophene backbone are described as the first example for organic electronic devices. The donor (thiophene)-alt-acceptor (cyclopentadienone) copolymers exhibit a substantial p-carrier mobility in OFET but an unexpected noncorrelation between absorption and photoconductivity.
Bibliography:Text giving full experimental details for the synthesis of all new materials as well as the measurements, differential scanning calorimetry (DSC), cyclic voltammograms, XRD patterns, UV−vis absorption spectra, the in situ conductivity measurement, and crystal data tables. This material is available free of charge via the Internet at http://pubs.acs.org.
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ISSN:0002-7863
1520-5126
DOI:10.1021/ja806784e