Strain Relaxation in CVD Graphene: Wrinkling with Shear Lag

We measure uniaxial strain fields in the vicinity of edges and wrinkles in graphene prepared by chemical vapor deposition (CVD), by combining microscopy techniques and local vibrational characterization. These strain fields have magnitudes of several tenths of a percent and extend across micrometer...

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Bibliographic Details
Published inNano letters Vol. 15; no. 8; pp. 5098 - 5104
Main Authors Bronsgeest, Merijntje S, Bendiab, Nedjma, Mathur, Shashank, Kimouche, Amina, Johnson, Harley T, Coraux, Johann, Pochet, Pascal
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 12.08.2015
Subjects
Chemical vapor deposition
Coherence
Condensed Matter
Graphene
Materials Science
Micrometers
Microscopy
Physics
Shear
Strain
Strain relaxation
graphene on cobalt
shear lag
buckling
Raman spectroscopy
strain relief
uniaxial strain
strain
CVD
Raman
cobalt
graphene
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Summary:We measure uniaxial strain fields in the vicinity of edges and wrinkles in graphene prepared by chemical vapor deposition (CVD), by combining microscopy techniques and local vibrational characterization. These strain fields have magnitudes of several tenths of a percent and extend across micrometer distances. The nonlinear shear-lag model remarkably captures these strain fields in terms of the graphene–substrate interaction and provides a complete understanding of strain-relieving wrinkles in graphene for any level of graphene–substrate coherency.
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ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.5b01246