Memorization of Strain-Induced Moiré Patterns in Vertical van der Waals Materials

• Published in: ACS applied materials & interfaces Vol. 17; no. 10; pp. 16223 - 16233
• Main Authors: Dey, Aditya, Hasan, Nazmul, Wu, Stephen M., Askari, Hesam
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 12.03.2025
• Subjects: design; domain; graphene; materials; strains; Surfaces, Interfaces, and Applications; van der Waals forces; interface mechanics; strain-induced moiré patterns; strain memorization; machine-learned interatomic potential; atomistic simulations; strain-induced moiré patterns
• ISSN: 1944-8244; 1944-8252; 1944-8252
• DOI: 10.1021/acsami.4c22462

Twisting layers in van der Waals (vdW) materials have traditionally produced moiré patterns but often suffer from alignment issues and nonuniformity due to the sensitivity of twist angles. Applying strain alone can also generate these patterns, eliminating the need for interlayer rotation and enabling controlled, reproducible moiré formation. We present the mechanistic principles governing the evolution of strain-induced moiré patterns in vertically stacked graphene through atomistic simulations. By analyzing local strain distribution, we identify a three-stage interlayer slippage process responsible for pattern formation. Our analyses reveal that these triangular moiré domains are stable and retained upon unloading, ensuring consistent and reproducible pattern formation even after strain removal. Additionally, we demonstrate that this strain history can be utilized to reapply load in a step-by-step process to achieve uniform moiré domains without requiring higher strain magnitudes. This approach provides a robust mechanism for designing wafer-scale quantum materials with uniform and reproducible moiré superlattices.