Core–Shell Heterojunction of Silicon Nanowire Arrays and Carbon Quantum Dots for Photovoltaic Devices and Self-Driven Photodetectors
Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core–shell heterojunction photovoltaic device by direct...
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| Published in | ACS nano Vol. 8; no. 4; pp. 4015 - 4022 |
|---|---|
| Main Authors | , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
American Chemical Society
22.04.2014
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core–shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 103 at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core–shell heterojunction device could find potential applications in future high-performance optoelectronic devices. |
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| AbstractList | Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices. Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core–shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 103 at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core–shell heterojunction device could find potential applications in future high-performance optoelectronic devices. Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices. Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10 super(3) at plus or minus 0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices. Keywords: silicon nanowire array; carbon quantum dots; surface passivation; relative balance; barrier height |
| Author | Nie, Biao Luo, Linbao Yu, Yongqiang Xie, Chao Liang, Feng-Xia Zeng, Longhui Wu, Chun-Yan Wang, Ming-Zheng Feng, Mei Wu, Yucheng Yu, Shu-Hong |
| AuthorAffiliation | Department of Chemistry University of Science and Technology of China School of Electronic Science and Applied Physics School of Materials Science and Engineering Hefei University of Technology |
| AuthorAffiliation_xml | – name: University of Science and Technology of China – name: Hefei University of Technology – name: Department of Chemistry – name: School of Materials Science and Engineering – name: School of Electronic Science and Applied Physics |
| Author_xml | – sequence: 1 givenname: Chao surname: Xie fullname: Xie, Chao – sequence: 2 givenname: Biao surname: Nie fullname: Nie, Biao – sequence: 3 givenname: Longhui surname: Zeng fullname: Zeng, Longhui – sequence: 4 givenname: Feng-Xia surname: Liang fullname: Liang, Feng-Xia – sequence: 5 givenname: Ming-Zheng surname: Wang fullname: Wang, Ming-Zheng – sequence: 6 givenname: Linbao surname: Luo fullname: Luo, Linbao email: luolb@hfut.edu.cn, ycwu@hfut.edu.cn, shyu@ustc.edu.cn – sequence: 7 givenname: Mei surname: Feng fullname: Feng, Mei – sequence: 8 givenname: Yongqiang surname: Yu fullname: Yu, Yongqiang – sequence: 9 givenname: Chun-Yan surname: Wu fullname: Wu, Chun-Yan – sequence: 10 givenname: Yucheng surname: Wu fullname: Wu, Yucheng email: luolb@hfut.edu.cn, ycwu@hfut.edu.cn, shyu@ustc.edu.cn – sequence: 11 givenname: Shu-Hong surname: Yu fullname: Yu, Shu-Hong email: luolb@hfut.edu.cn, ycwu@hfut.edu.cn, shyu@ustc.edu.cn |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/24665986$$D View this record in MEDLINE/PubMed |
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| Snippet | Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy... |
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| SubjectTerms | Arrays Carbon Heterojunctions Nanostructure Nanowires Photodetectors Photovoltaic cells Qunatum dots Silicon Solar cells |
| Title | Core–Shell Heterojunction of Silicon Nanowire Arrays and Carbon Quantum Dots for Photovoltaic Devices and Self-Driven Photodetectors |
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