Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors

Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO2/Si s...

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Bibliographic Details
Published inACS nano Vol. 6; no. 7; pp. 5988 - 5994
Main Authors Hu, PingAn, Wen, Zhenzhong, Wang, Lifeng, Tan, Pingheng, Xiao, Kai
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 24.07.2012
Subjects
Cleavage
Electronics
Exfoliation
Nanomaterials
Nanostructure
Photodetectors
Semiconductors
Silicon substrates
Two dimensional
photodetectors
gallium selenide
nanosheets
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Summary:Two-dimensional (2D) semiconductor nanomaterials hold great promises for future electronics and optics. In this paper, a 2D nanosheets of ultrathin GaSe has been prepared by using mechanical cleavage and solvent exfoliation method. Single- and few-layer GaSe nanosheets are exfoliated on an SiO2/Si substrate and characterized by atomic force microscopy and Raman spectroscopy. Ultrathin GaSe-based photodetector shows a fast response of 0.02 s, high responsivity of 2.8 AW–1 and high external quantum efficiency of 1367% at 254 nm, indicating that the two-dimensional nanostructure of GaSe is a new promising material for high performance photodetectors.
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ISSN:1936-0851
1936-086X
1936-086X
DOI:10.1021/nn300889c