Optical Probing of the Electronic Interaction between Graphene and Hexagonal Boron Nitride

• Published in: ACS nano Vol. 7; no. 2; pp. 1533 - 1541
• Main Authors: Ahn, Gwanghyun, Kim, Hye Ri, Ko, Taeg Yeoung, Choi, Kyoungjun, Watanabe, Kenji, Taniguchi, Takashi, Hong, Byung Hee, Ryu, Sunmin
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 26.02.2013
• Subjects: Adhesive strength; Boron nitride; Doping; Electronics; Graphene; Nanostructure; Spectra; Strain; Two dimensional; 2D band; boron nitride; Raman spectroscopy; electronic coupling; graphene
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/nn305306n

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturb their various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few percent decrease in the Fermi velocity (v F) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in v F and mechanical strain but not by charge doping, unlike graphene supported on SiO2 substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.