High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)

The high speed on–off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core–shell InGaN/GaN nanowire LEDs...

Full description

Saved in:
Bibliographic Details
Published inNano letters Vol. 15; no. 4; pp. 2318 - 2323
Main Authors Koester, Robert, Sager, Daniel, Quitsch, Wolf-Alexander, Pfingsten, Oliver, Poloczek, Artur, Blumenthal, Sarah, Keller, Gregor, Prost, Werner, Bacher, Gerd, Tegude, Franz-Josef
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 08.04.2015
Subjects
Arrays
Devices
Electroluminescence
Equipment Design
Equipment Failure Analysis
Gallium - chemistry
Gallium nitrides
High speed
Indium - chemistry
Indium gallium nitrides
Light-emitting diodes
Lighting - instrumentation
Materials Testing
Nanowires
Nanowires - chemistry
Nanowires - ultrastructure
Particle Size
Semiconductors
Silicon - chemistry
LED
photoluminescence
high frequency operation
electroluminescence
GaInN/GaN
nanowire
Online AccessGet full text

Cover

More Information
Summary:The high speed on–off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core–shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence studies exhibit 90–10% rise- and fall-times of about 220 ps under GHz electrical excitation. The data underline the potential of these devices for optical data communication in polymer fibers and free space.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1530-6984
1530-6992
DOI:10.1021/nl504447j