Single Carbon Nanotube Transistor at GHz Frequency

We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1−1.6 GHz range, we deduce device transconductance g m and gate−nanotube capacitance C g of micro- and nanometric devices. A large and frequency-independent g m ∼ 20 μS is observ...

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Published inNano letters Vol. 8; no. 2; pp. 525 - 528
Main Authors Chaste, J, Lechner, L, Morfin, P, Fève, G, Kontos, T, Berroir, J.-M, Glattli, D. C, Happy, H, Hakonen, P, Plaçais, B
Format Journal Article
LanguageEnglish
Published Washington, DC American Chemical Society 01.02.2008
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Summary:We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1−1.6 GHz range, we deduce device transconductance g m and gate−nanotube capacitance C g of micro- and nanometric devices. A large and frequency-independent g m ∼ 20 μS is observed on short devices, which meets the best dc results. The capacitance per unit gate length of 60 aF/μm is typical of top gates on a conventional oxide with ε ∼ 10. This value is a factor of 3−5 below the nanotube quantum capacitance which, according to recent simulations, favors high transit frequencies f T = g m/2πC g. For our smallest devices, we find a large f T ∼ 50 GHz with no evidence of saturation in length dependence.
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl0727361