Single Carbon Nanotube Transistor at GHz Frequency
We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1−1.6 GHz range, we deduce device transconductance g m and gate−nanotube capacitance C g of micro- and nanometric devices. A large and frequency-independent g m ∼ 20 μS is observ...
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Published in | Nano letters Vol. 8; no. 2; pp. 525 - 528 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Washington, DC
American Chemical Society
01.02.2008
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Subjects | |
Online Access | Get full text |
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Summary: | We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1−1.6 GHz range, we deduce device transconductance g m and gate−nanotube capacitance C g of micro- and nanometric devices. A large and frequency-independent g m ∼ 20 μS is observed on short devices, which meets the best dc results. The capacitance per unit gate length of 60 aF/μm is typical of top gates on a conventional oxide with ε ∼ 10. This value is a factor of 3−5 below the nanotube quantum capacitance which, according to recent simulations, favors high transit frequencies f T = g m/2πC g. For our smallest devices, we find a large f T ∼ 50 GHz with no evidence of saturation in length dependence. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Undefined-1 ObjectType-Feature-3 content type line 23 |
ISSN: | 1530-6984 1530-6992 |
DOI: | 10.1021/nl0727361 |