GaAs-Based Nanoneedle Light Emitting Diode and Avalanche Photodiode Monolithically Integrated on a Silicon Substrate

Monolithic integration of III−V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III−V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes...

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Bibliographic Details
Published inNano letters Vol. 11; no. 2; pp. 385 - 390
Main Authors Chuang, Linus C, Sedgwick, Forrest G, Chen, Roger, Ko, Wai Son, Moewe, Michael, Ng, Kar Wei, Tran, Thai-Truong D, Chang-Hasnain, Connie
Format Journal Article
LanguageEnglish
Published Washington, DC American Chemical Society 09.02.2011
Subjects
Applied sciences
Arsenicals - chemistry
Cross-disciplinary physics: materials science; rheology
Crystallization - methods
Electronics
Equipment Design
Equipment Failure Analysis
Exact sciences and technology
Gallium - chemistry
Lighting - instrumentation
Materials science
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanostructures - chemistry
Nanostructures - ultrastructure
Nanotechnology - instrumentation
Optoelectronic devices
Particle Size
Photometry - instrumentation
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Silicon - chemistry
Systems Integration
CMOS compatible
LED
Nanoneedle
III−V on Si
APD
nanowire
Gallium arsenides
Epitaxy
Light emitting diodes
Optoelectronic devices
III-V compound
Mismatch lattice
Growth mechanism
Avalanche photodiodes
Silicon
CMOS integrated circuits
Nanostructured materials
III-V semiconductors
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Summary:Monolithic integration of III−V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III−V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.
Bibliography:ObjectType-Article-1
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl102988w