Periodic Array of Polyelectrolyte-Gated Organic Transistors from Electrospun Poly(3-hexylthiophene) Nanofibers

• Published in: Nano letters Vol. 10; no. 1; pp. 347 - 351
• Main Authors: Lee, Sung W, Lee, Hyun J, Choi, Ji H, Koh, Won G, Myoung, Jae M, Hur, Jae H, Park, Jong J, Cho, Jeong H, Jeong, Unyong
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 13.01.2010
• Subjects: Applied sciences; Catalytic methods; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Materials science; Methods of nanofabrication; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Physics; Radiation effects on specific materials; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Structure of solids and liquids; crystallography; Transistors; ion gel; Organic field effect transistors; polyelectrolyte; electrospinning; P3HT nanofiber; Radiation effects; Field effect transistors; Mechanical properties; Nanofiber; Mechanical stability; Covalent bonds; Ionic liquid; Polyelectrolyte; Dielectric thin films; High field; Logic gates; Organic semiconductors; Hydrogel; Arrays; Nanostructured materials
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl903722z

High-performance organic field-effect transistors (OFETs) based on polyelectrolyte gate dielectric and electrospun poly(3-hexylthiophene) (P3HT) nanofibers were fabricated on a flexible polymer substrate. The use of UV-crosslinked hydrogel including ionic liquids for the insulating layer enabled fast and large-area fabrication of transistor arrays. The P3HT nanofibers were directly deposited on the methacrylated polymer substrate. During UV irradiation through a patterned mask, the methacrylate groups formed covalent bonds with the patterned polyelectrolyte dielectric layer, which provides mechanical stability to the devices. The OFETs operate at voltages of less than 2 V. The average field-effect mobility and on/off ratio were ∼2 cm2/(Vs) and 105, respectively.