Tuning Energetic Levels in Nanocrystal Quantum Dots through Surface Manipulations

• Published in: Nano letters Vol. 8; no. 2; pp. 678 - 684
• Main Authors: Soreni-Harari, Michal, Yaacobi-Gross, Nir, Steiner, Dov, Aharoni, Assaf, Banin, Uri, Millo, Oded, Tessler, Nir
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 01.02.2008
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Crystallization - methods; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Energy Transfer; Equipment Design; Equipment Failure Analysis; Exact sciences and technology; Materials science; Materials Testing; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Nanostructures - chemistry; Nanostructures - ultrastructure; Nanotechnology - instrumentation; Nanotechnology - methods; Particle Size; Physics; Quantum Dots; Surface Properties; Electronic properties; Electronic structure; Quantum dots; Ligands; Polarity; Scanning tunneling spectroscopy; Nanostructured materials; Electron energy level; Indium arsenides; III-V compound; Nanocrystal; III-V semiconductors
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl0732171

We demonstrate tuning of the electronic level positions with respect to the vacuum level in colloidal InAs nanocrystals using surface ligand exchange. Electrochemical as well as scanning tunneling spectroscopy measurements reveal that the tuning is largely dependent on the nanocrystal size and the surface linking group, while the polarity of the ligand molecules has a lesser effect. The implications of affecting the electronic system of nanocrystal through its capping are illustrated through prototype devices.