Proton Beam Writing of Three-Dimensional Nanostructures in Hydrogen Silsesquioxane

Proton beam writing (p-beam writing) is a promising new direct-write lithographic technique for three-dimensional nanofabrication. In p-beam writing a megaelectronvolt proton beam is focused to a sub-100-nm spot size and scanned over a suitable resist material. Unlike electrons, when a proton beam i...

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Bibliographic Details
Published inNano letters Vol. 6; no. 3; pp. 579 - 582
Main Authors van Kan, Jeroen A, Bettiol, Andrew A, Watt, Frank
Format Journal Article
LanguageEnglish
Published Washington, DC American Chemical Society 01.03.2006
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of nanofabrication
Physics
Proximity effect
Nanostructures
Aspect ratio
Nanomaterial synthesis
Resists
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Summary:Proton beam writing (p-beam writing) is a promising new direct-write lithographic technique for three-dimensional nanofabrication. In p-beam writing a megaelectronvolt proton beam is focused to a sub-100-nm spot size and scanned over a suitable resist material. Unlike electrons, when a proton beam interacts with resist it follows an almost straight path resulting in high aspect ratio structures with vertical, smooth sidewalls. The secondary electrons induced by the primary proton beam have low energy and therefore limited range, resulting in minimal proximity effects. Hydrogen silsesquioxane has been identified as a superior resist for p-beam writing, allowing the production of high-aspect-ratio structures down to 22 nm.
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl052478c