Single GaAs/GaAsP Coaxial Core−Shell Nanowire Lasers
Highly uniform GaAs/GaAsP coaxial nanowires were prepared via selective-area metal organic vapor phase epitaxy. Photoluminescence spectra from a single nanowire indicate that the obtained heterostructures can produce near-infrared (NIR) lasing under pulsed light excitation. The end facets of a singl...
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Published in | Nano letters Vol. 9; no. 1; pp. 112 - 116 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Washington, DC
American Chemical Society
01.01.2009
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Subjects | |
Online Access | Get full text |
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Summary: | Highly uniform GaAs/GaAsP coaxial nanowires were prepared via selective-area metal organic vapor phase epitaxy. Photoluminescence spectra from a single nanowire indicate that the obtained heterostructures can produce near-infrared (NIR) lasing under pulsed light excitation. The end facets of a single nanowire form a natural mirror surface to create an axial cavity, which realizes resonance and give stimulated emission. This study is a considerable advance toward the realization of nanowire-based NIR light sources. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Undefined-1 ObjectType-Feature-3 content type line 23 |
ISSN: | 1530-6984 1530-6992 |
DOI: | 10.1021/nl802636b |