Single GaAs/GaAsP Coaxial Core−Shell Nanowire Lasers

Highly uniform GaAs/GaAsP coaxial nanowires were prepared via selective-area metal organic vapor phase epitaxy. Photoluminescence spectra from a single nanowire indicate that the obtained heterostructures can produce near-infrared (NIR) lasing under pulsed light excitation. The end facets of a singl...

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Published inNano letters Vol. 9; no. 1; pp. 112 - 116
Main Authors Hua, Bin, Motohisa, Junichi, Kobayashi, Yasunori, Hara, Shinjiroh, Fukui, Takashi
Format Journal Article
LanguageEnglish
Published Washington, DC American Chemical Society 01.01.2009
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Summary:Highly uniform GaAs/GaAsP coaxial nanowires were prepared via selective-area metal organic vapor phase epitaxy. Photoluminescence spectra from a single nanowire indicate that the obtained heterostructures can produce near-infrared (NIR) lasing under pulsed light excitation. The end facets of a single nanowire form a natural mirror surface to create an axial cavity, which realizes resonance and give stimulated emission. This study is a considerable advance toward the realization of nanowire-based NIR light sources.
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl802636b