Controlled Growth of Si Nanowire Arrays for Device Integration

• Published in: Nano letters Vol. 5; no. 3; pp. 457 - 460
• Main Authors: Hochbaum, Allon I., Fan, Rong, He, Rongrui, Yang, Peidong
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 01.03.2005
• Subjects: Colloids - analysis; Colloids - chemistry; Cross-disciplinary physics: materials science; rheology; Crystallization - methods; Electric Wiring; Exact sciences and technology; Materials science; Materials Testing; Molecular Conformation; Nanoscale materials and structures: fabrication and characterization; Nanotechnology - methods; Nanotubes - analysis; Nanotubes - chemistry; Nanotubes - ultrastructure; Particle Size; Physics; Quantum wires; Silicon - analysis; Silicon - chemistry; Systems Integration; Inorganic compounds; Semiconductor materials; Colloids; VLS growth; Crystal growth from vapors; Experimental study; Density; Precursor; CVD; Growth mechanism; Silicon; Nanowires; Nanostructured materials
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl047990x

Silicon nanowires were synthesized, in a controlled manner, for their practical integration into devices. Gold colloids were used for nanowire synthesis by the vapor−liquid−solid growth mechanism. Using SiCl4 as the precursor gas in a chemical vapor deposition system, nanowire arrays were grown vertically aligned with respect to the substrate. By manipulating the colloid deposition on the substrate, highly controlled growth of aligned silicon nanowires was achieved. Nanowire arrays were synthesized with narrow size distributions dictated by the seeding colloids and with average diameters down to 39 nm. The density of wire growth was successfully varied from ∼0.1−1.8 wires/μm2. Patterned deposition of the colloids led to confinement of the vertical nanowire growth to selected regions. In addition, Si nanowires were grown directly into microchannels to demonstrate the flexibility of the deposition technique. By controlling various aspects of nanowire growth, these methods will enable their efficient and economical incorporation into devices.