Realization of a Linear Germanium Nanowire p−n Junction
Germanium nanowires grown by chemical vapor deposition exhibit a peculiar dopant incorporation mechanism. The dopant atoms, such as boron and phosphorus, get incorporated through the wire surface, a mechanism which limits the doping modulation along the wire length, and therefore the fabrication of...
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Published in | Nano letters Vol. 6; no. 9; pp. 2070 - 2074 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
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Washington, DC
American Chemical Society
01.09.2006
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Abstract | Germanium nanowires grown by chemical vapor deposition exhibit a peculiar dopant incorporation mechanism. The dopant atoms, such as boron and phosphorus, get incorporated through the wire surface, a mechanism which limits the doping modulation along the wire length, and therefore the fabrication of more elaborate structures that combine both n- and p-type doping. Using a novel device design that circumvents these constraints, we demonstrate here a linear Ge nanowire p−n junction. |
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AbstractList | Germanium nanowires grown by chemical vapor deposition exhibit a peculiar dopant incorporation mechanism. The dopant atoms, such as boron and phosphorus, get incorporated through the wire surface, a mechanism which limits the doping modulation along the wire length, and therefore the fabrication of more elaborate structures that combine both n- and p-type doping. Using a novel device design that circumvents these constraints, we demonstrate here a linear Ge nanowire p-n junction. Germanium nanowires grown by chemical vapor deposition exhibit a peculiar dopant incorporation mechanism. The dopant atoms, such as boron and phosphorus, get incorporated through the wire surface, a mechanism which limits the doping modulation along the wire length, and therefore the fabrication of more elaborate structures that combine both n- and p-type doping. Using a novel device design that circumvents these constraints, we demonstrate here a linear Ge nanowire p−n junction. |
Author | Appenzeller, Joerg Guha, Supratik Reuter, Mark C Tutuc, Emanuel |
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Keywords | CVD Scanning electron microscopy Inorganic compounds p n junctions Boron additions Germanium Crystal growth from vapors Modulation doping Nanowires Phosphorus additions Wire IV characteristic |
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Snippet | Germanium nanowires grown by chemical vapor deposition exhibit a peculiar dopant incorporation mechanism. The dopant atoms, such as boron and phosphorus, get... |
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SubjectTerms | Cross-disciplinary physics: materials science; rheology Crystallization - methods Electric Impedance Electrochemistry - instrumentation Electrochemistry - methods Electromagnetic Fields Equipment Design Equipment Failure Analysis Exact sciences and technology Germanium - chemistry Materials science Microelectrodes Molecular Conformation Nanoscale materials and structures: fabrication and characterization Nanotubes - chemistry Nanotubes - ultrastructure Particle Size Physics Quantum wires Semiconductors |
Title | Realization of a Linear Germanium Nanowire p−n Junction |
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