Realization of a Linear Germanium Nanowire p−n Junction

• Published in: Nano letters Vol. 6; no. 9; pp. 2070 - 2074
• Main Authors: Tutuc, Emanuel, Appenzeller, Joerg, Reuter, Mark C, Guha, Supratik
• Format: Journal Article
• Language: English
• Published: Washington, DC American Chemical Society 01.09.2006
• Subjects: Cross-disciplinary physics: materials science; rheology; Crystallization - methods; Electric Impedance; Electrochemistry - instrumentation; Electrochemistry - methods; Electromagnetic Fields; Equipment Design; Equipment Failure Analysis; Exact sciences and technology; Germanium - chemistry; Materials science; Microelectrodes; Molecular Conformation; Nanoscale materials and structures: fabrication and characterization; Nanotubes - chemistry; Nanotubes - ultrastructure; Particle Size; Physics; Quantum wires; Semiconductors; CVD; Scanning electron microscopy; Inorganic compounds; p n junctions; Boron additions; Germanium; Crystal growth from vapors; Modulation doping; Nanowires; Phosphorus additions; Wire; IV characteristic
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl061338f

Germanium nanowires grown by chemical vapor deposition exhibit a peculiar dopant incorporation mechanism. The dopant atoms, such as boron and phosphorus, get incorporated through the wire surface, a mechanism which limits the doping modulation along the wire length, and therefore the fabrication of more elaborate structures that combine both n- and p-type doping. Using a novel device design that circumvents these constraints, we demonstrate here a linear Ge nanowire p−n junction.