Conductance of Single Cobalt Chalcogenide Cluster Junctions

Understanding the electrical properties of semiconducting quantum dot devices have been limited due to the variability of their size/composition and the chemistry of ligand/electrode binding. Furthermore, to probe their electrical conduction properties and its dependence on ligand/electrode binding,...

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Published inJournal of the American Chemical Society Vol. 133; no. 22; pp. 8455 - 8457
Main Authors Boardman, Brycelyn M, Widawsky, Jonathan R, Park, Young S, Schenck, Christine L, Venkataraman, Latha, Steigerwald, Michael L, Nuckolls, Colin
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 08.06.2011
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Summary:Understanding the electrical properties of semiconducting quantum dot devices have been limited due to the variability of their size/composition and the chemistry of ligand/electrode binding. Furthermore, to probe their electrical conduction properties and its dependence on ligand/electrode binding, measurements must be carried out at the single dot/cluster level. Herein we report scanning tunneling microscope based break junction measurements of cobalt chalcogenide clusters with Te, Se and S to probe the conductance properties. Our measured conductance trends show that the Co–Te based clusters have the highest conductance while the Co-S clusters the lowest. These trends are in very good agreement with cyclic voltammetry measurements of the first oxidation potentials and with density functional theory calculations of their HOMO–LUMO gaps.
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ISSN:0002-7863
1520-5126
DOI:10.1021/ja201334s