High Performance n-Type Field-Effect Transistors Based on Indenofluorenedione and Diindenopyrazinedione Derivatives

• Published in: Chemistry of materials Vol. 20; no. 8; pp. 2615 - 2617
• Main Authors: Nakagawa, Tomohiro, Kumaki, Daisuke, Nishida, Jun-ichi, Tokito, Shizuo, Yamashita, Yoshiro
• Format: Journal Article
• Language: English
• Published: American Chemical Society 22.04.2008
• Subjects: Electronic Materials; Semiconductors