High Performance n-Type Field-Effect Transistors Based on Indenofluorenedione and Diindenopyrazinedione Derivatives

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Bibliographic Details
Published inChemistry of materials Vol. 20; no. 8; pp. 2615 - 2617
Main Authors Nakagawa, Tomohiro, Kumaki, Daisuke, Nishida, Jun-ichi, Tokito, Shizuo, Yamashita, Yoshiro
Format Journal Article
LanguageEnglish
Published American Chemical Society 22.04.2008
Subjects
Electronic Materials
Semiconductors
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Bibliography:ark:/67375/TPS-9VXHGPV8-S
Synthesis, absorption spectra, DPVs, Id versus Vd and Id versus Vg characteristics for 1b and 2b, and X-ray crystallographic data for 1b and 2b (PDF). This material is available free of charge via the Internet at http://pubs.acs.org.
istex:15ADB3C2CD823D2CBC33FD07AAC8852FDE56B5D5
ISSN:0897-4756
1520-5002
DOI:10.1021/cm800366b