Effect of Electron-Beam Irradiation on Organic Semiconductor and Its Application for Transistor-Based Dosimeters

The effects of electron-beam irradiation on the organic semiconductor rubrene and its application as a dosimeter was investigated. Through the measurements of photoluminescence and the ultraviolet photoelectron spectroscopy, we found that electron-beam irradiation induces n-doping of rubrene. Additi...

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Published inACS applied materials & interfaces Vol. 8; no. 30; pp. 19192 - 19196
Main Authors Kim, Jae Joon, Ha, Jun Mok, Lee, Hyeok Moo, Raza, Hamid Saeed, Park, Ji Won, Cho, Sung Oh
Format Journal Article
LanguageEnglish
Published United States American Chemical Society 03.08.2016
Subjects
semiconductor doping
electron-beam irradiation
organic thin-film transistor
rubrene
dosimeter
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Summary:The effects of electron-beam irradiation on the organic semiconductor rubrene and its application as a dosimeter was investigated. Through the measurements of photoluminescence and the ultraviolet photoelectron spectroscopy, we found that electron-beam irradiation induces n-doping of rubrene. Additionally, we fabricated rubrene thin-film transistors with pristine and irradiated rubrene, and discovered that the decrease in transistor properties originated from the irradiation of rubrene and that the threshold voltages are shifted to the opposite directions as the irradiated layers. Finally, a highly sensitive and air-stable electron dosimeter was fabricated based on a rubrene transistor.
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ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.6b05555