Programmable Spin–Orbit Torque Multistate Memory and Spin Logic Cell

• Published in: ACS nano Vol. 16; no. 4; pp. 6878 - 6885
• Main Authors: Fan, Yibo, Han, Xiang, Zhao, Xiaonan, Dong, Yanan, Chen, Yanxue, Bai, Lihui, Yan, Shishen, Tian, Yufeng
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 26.04.2022
• Subjects: multistate memory; spin logic; magnetization switching; spin−orbit torque; exchange bias

Controllable spin–orbit torque based nonvolatile memory is highly desired for constructing energy efficient reconfigurable logic-in-memory computing suitable for emerging data-intensive applications. Here, we report our exploration of the IrMn/Co/Ru/CoPt/CoO heterojunction as a potential candidate f...