Programmable Spin–Orbit Torque Multistate Memory and Spin Logic Cell

• Published in: ACS nano Vol. 16; no. 4; pp. 6878 - 6885
• Main Authors: Fan, Yibo, Han, Xiang, Zhao, Xiaonan, Dong, Yanan, Chen, Yanxue, Bai, Lihui, Yan, Shishen, Tian, Yufeng
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 26.04.2022
• Subjects: multistate memory; spin logic; magnetization switching; spin−orbit torque; exchange bias
• ISSN: 1936-0851; 1936-086X; 1936-086X
• DOI: 10.1021/acsnano.2c01930

Controllable spin–orbit torque based nonvolatile memory is highly desired for constructing energy efficient reconfigurable logic-in-memory computing suitable for emerging data-intensive applications. Here, we report our exploration of the IrMn/Co/Ru/CoPt/CoO heterojunction as a potential candidate for applications in both multistate memory and programmable spin logic. The studied heterojunction can be programmed into four different magnetic configurations at will by tuning both the in-plane exchange bias at the interface of IrMn and Co layers and the out-of-plane exchange bias at the interface of CoPt and CoO layers. Moreover, on the basis of the controllable exchange bias effect, 10 states of nonvolatile memory and multiple logic-in-memory functions have been demonstrated. Our findings indicate that IrMn/Co/Ru/CoPt/CoO multilayered structures can be used as a building block for next-generation logic-in-memory and multifunctional multidimensional spintronic devices.