An Oxide Schottky Junction Artificial Optoelectronic Synapse

• Published in: ACS nano Vol. 13; no. 2; pp. 2634 - 2642
• Main Authors: Gao, Shuang, Liu, Gang, Yang, Huali, Hu, Chao, Chen, Qilai, Gong, Guodong, Xue, Wuhong, Yi, Xiaohui, Shang, Jie, Li, Run-Wei
• Format: Journal Article
• Language: English
• Published: United States American Chemical Society 26.02.2019
• Subjects: Schottky junction; artificial synapse; optoelectronic device; oxide heterojunction; visual memory
• ISSN: 1936-0851; 1936-086X; 1936-086X
• DOI: 10.1021/acsnano.9b00340

The rapid development of artificial intelligence techniques and future advanced robot systems sparks emergent demand on the accurate perception and understanding of the external environments via visual sensing systems that can co-locate the self-adaptive detecting, processing, and memorizing of optical signals. In this contribution, a simple indium–tin oxide/Nb-doped SrTiO3 (ITO/Nb:SrTiO3) heterojunction artificial optoelectronic synapse is proposed and demonstrated. Through the light and electric field co-modulation of the Schottky barrier profile at the ITO/Nb:SrTiO3 interface, the oxide heterojunction device can respond to the entire visible light region in a neuromorphic manner, allowing synaptic paired-pulse facilitation, short/long-term memory, and “learning-experience” behavior for optical information manipulation. More importantly, the photoplasticity of the artificial synapse has been modulated by heterosynaptic means with a sub-1 V external voltage, not only enabling an optoelectronic analog of the mechanical aperture device showing adaptive and stable optical perception capability under different illuminating conditions but also making the artificial synapse suitable for the mimicry of interest-modulated human visual memories.